SiC Schottky

Due to the physical characteristics of Silicon Carbides, the SiC Schottky can maintain a good performance at high temperature; the performance of forward voltage and dynamic reverse recovery are better than silicon products.

PANJIT has launched 650Vand 1200V SiC Schottky diodes, which is suitable for use in servers, solar inverters, power supplies and other applications requiring high efficiency designs

SiC Schottky has characteristic such as low switching losse, better performcne in high temperature, forward voltage temperature coefficient, excellent surge withstand capability etc. which is much more efficency.